mskd60_msad60_mscd60 - rev 1 www.microsemi.com dec, 2009 1/3 mskd60 ; msad60 ; mscd60 module type type v rrm v rsm mskd60-08 mskd60-12 mskd60-16 mskd60-18 msad60-08 MSAD60-12 msad60-16 msad60-18 mscd60-08 mscd60-12 mscd60-16 mscd60-18 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v maximum ratings symbol conditions values units i fav tc=100 60 a i fsm t=10ms tv j =45 1150 a i 2 t t=10ms tv j =45 6600 a 2 s v isol a.c.50hz;r.m.s.;1min 3000 v t vj -40 to 150 t stg -40 to 125 mt to terminals(m5) 2 5-4 nm ms to heatsink(m5) 2 5-4 nm weight module 110 g thermal characteristics symbol conditions values units r th(j-c) per diode 0.59 / w r th(c-s) module 0.1 / w electrical characteristics circuit mskd 1 3 2 msad 1 3 2 mscd 1 3 2 glass passivated rectifier diode modules v rrm 800 to 1800v i fav 60 am p applications y non-controllable rectifiers for ac/ac converters y line rectifiers for transistorized ac motor controllers y field supply for dc motors features y blocking voltage: 800 to 1800v y heat transfer through aluminum oxide ceramic isolated metal baseplate y glass passivated chip symbol conditions values units v fm t=25 i fm =200a 1.3 v i rd t vj =t vjm v rd =v rrm 5 ma
mskd60_msad60_mscd60 - rev 1 www.microsemi.com dec, 2009 2/3 mskd60 ; msad60 ; mscd60 performance curves fig1. forward characteristics fig3. transient thermal impedance fi g 2. power dissi p ation fig4. max non-repetitive forward surge current fig5.forward current derating curve z th(j- c ) typ. 25 125 if 400 a 300 200 100 0 0 vf 0.5 1.0 1.5 2.0 v 0.001 0.01 0.1 1 10 100 s 1 10 cycles 100 750 0 1500 a 0 tc 50 100 150 c 50hz i d 100 a 80 60 0 40 20 0.6 / w 0 0.3 0 i d 30 60 a 150 w 75 p vtot 0 three-phase single-phase three-phase single-phase
mskd60_msad60_mscd60 - rev 1 www.microsemi.com dec, 2009 3/3 mskd60 ; msad60 ; mscd60 package outline information case-d1 dimensions in mm
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